Metal-semiconductor nanocontacts: silicon nanowires

On the Properties of Surface Reconstructed Silicon Nanowires

One-dimensional nanostructures are attracting great interest for their potentially high impact in future molecular electronics applications, such as nanoswitches and nanocontacts [1]. Silicon nanowires (SiNWs) appear to be a special appealing alternative, due to the ideal interface compatibility with conventional Si-based technology and to the possibility to tune their conductive properties by ...

Oral ON THE PROPERTIES OF SURFACE RECONSTRUCTED SILICON NANOWIRES

One-dimensional nanostructures are attracting great interest for their potentially high impact in future molecular electronics applications, such as nanoswitches and nanocontacts [1]. Silicon nanowires (SiNWs) appear to be a special appealing alternative, due to the ideal interface compatibility with conventional Si-based technology and to the possibility to tune their conductive properties by ...

Fabrication of nanocontacts for molecular devices using nanoimprint lithography

We present a simple process to fabricate gold nanocontacts with a gap as small as sub-10 nm. This method uses a two-step process of nanoimprint lithography ~NIL! and electromigration. First, 20 nm wide gold nanowires were fabricated by NIL on a silicon dioxide substrate. Then by passing an electric current through a nanowire, the nanowire is split into two wires with a gap as small as sub-10 nm...

Nanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of silicon wafer.

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts